参数资料
型号: 2N7607T3
元件分类: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封装: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件页数: 3/9页
文件大小: 190K
代理商: 2N7607T3
www.irf.com
3
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
PRELIMINARY
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a. Typical Single Event Effect, Safe Operating Area
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 300K Rads (Si)1
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
60
V
VGS = 0V, ID = 250A
VGS(th)
Gate Threshold Voltage
1.0
2.0
VGS = VDS, ID = 250A
IGSS
Gate-to-Source Leakage Forward
100
nA
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -10V
IDSS
Zero Gate Voltage Drain Current
10
A
VDS= 48V, VGS=0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
0.045
VGS = 4.5V, ID = 20A
RDS(on)
Static Drain-to-Source On-state
VSD
Diode Forward Voltage
1.2
V
VGS = 0V, ID = 20A
Resistance (Low Ohmic TO-257)
0.045
VGS = 4.5V, ID = 20A
1. Part numbers IRHLYS77034, IRHLYS73034
0
10
20
30
40
50
60
70
-7
-6
-5
-4
-3
-2
-1
0
VGS
VD
S
Kr
Xe
Au
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm
2))
(MeV)
(m)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-1V
-2V
-3V
-4V
-5V
-6V
-7V
Kr
37.3
400
48.6
60
35
Xe
63.3
435
38.4
60
-
Au
90
1480
80.4
60
-
相关PDF资料
PDF描述
2N7614M1 0.8 A, 250 V, 1.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
2N7620M2 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7624U3 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET
2N779A 100 mA, 15 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-18
2N834 NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
相关代理商/技术参数
参数描述
2N760A 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors
2N760AL 制造商: 功能描述: 制造商:undefined 功能描述:
2N760B 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18
2N7622U2 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
2N7632UC 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET