参数资料
型号: 2N7607T3
元件分类: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封装: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件页数: 9/9页
文件大小: 190K
代理商: 2N7607T3
www.irf.com
9
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
PRELIMINARY
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L = 0.49 mH
Peak IL = 20A, VGS = 10V
ISD ≤ 20A, di/dt ≤ 347A/s,
VDD ≤ 60V, TJ ≤ 150°C
Footnotes:
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Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2011
Case Outline and Dimensions — Low Ohmic TO-257AA
3.05 [.120]
0.13 [.005]
0.71 [.028]
MAX.
B
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
3
2
1
15.88 [.625]
12.70 [.500]
0.88 [.035]
0.64 [.025]
0.50 [.020]
C A
B
2X
3X
2.54 [.100]
C
10.66 [.420]
10.42 [.410]
A
13.63 [.537]
13.39 [.527]
3X 3.81 [.150]
3.56 [.140]
NOT ES:
1. DIMENSIONING & TOLERANCING PER ANS I Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.
OPTIONAL
PIN-OUT
CERAMIC EYELETS
STANDARD
PIN-OUT
PIN ASSIGNMENTS
2 = SOURCE
1 = DRAIN
3 = GATE
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
CAUTION
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