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参数资料
| 型号： | 2N7614M1 |
| 元件分类： | JFETs |
| 英文描述： | 0.8 A, 250 V, 1.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB |
| 封装： | HERMETIC SEALED PACKAGE-14 |
| 文件页数： | 1/9页 |
| 文件大小： | 202K |
| 代理商： | 2N7614M1 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 4.5V, TC= 25°C Continuous Drain Current
0.8
ID @ VGS = 4.5V, TC= 100°C Continuous Drain Current
0.5
IDM
Pulsed Drain Current
3.2
PD @ TC = 25°C
Max. Power Dissipation
1.4
W
Linear Derating Factor
0.01
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
50.4
mJ
IAR
Avalanche Current
0.8
A
EAR
Repetitive Avalanche Energy
0.14
mJ
dv/dt
Peak Diode Recovery dv/dt
12.3
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in/1.6mm from case for 10s)
Weight
1.3 (Typical)
g
oC
A
02/25/11
www.irf.com
1
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG77214
100K Rads (Si) 1.1
0.8A
IRHLG73214
300K Rads (Si) 1.1
0.8A
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHLG77214
LOGIC LEVEL POWER MOSFET
250V, Quad N-CHANNEL
THRU-HOLE (MO-036AB)
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Light Weight
MO-036AB
2N7614M1
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
PD-97339
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| 2N7635-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7636-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7637-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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