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参数资料
| 型号： | 2N7614M1 |
| 元件分类： | JFETs |
| 英文描述： | 0.8 A, 250 V, 1.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB |
| 封装： | HERMETIC SEALED PACKAGE-14 |
| 文件页数： | 3/9页 |
| 文件大小： | 202K |
| 代理商： | 2N7614M1 |
www.irf.com
3
Pre-Irradiation
IRHLG77214, 2N7614M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a. Typical Single Event Effect, Safe Operating Area
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation (Per Die)
Parameter
Up to 300K Rads (Si)1
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
250
—
V
VGS = 0V, ID = 250A
VGS(th)
Gate Threshold Voltage
1.0
2.0
VGS = VDS, ID = 250A
IGSS
Gate-to-Source Leakage Forward
—
100
nA
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
IDSS
Zero Gate Voltage Drain Current
—
10
A
VDS= 200V, VGS=0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
—
??
VGS = 4.5V, ID = 0.5A
RDS(on)
Static Drain-to-Source On-state
VSD
Diode Forward Voltage
—
1.2
V
VGS = 0V, ID = 0.8A
Resistance (MO-036AB)
—
1.1
VGS = 4.5V, ID = 0.5A
1. Part numbers IRHLG77214, IRHLG73214
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(m)
@VGS=
0V
-2V
-4V
-5V
-6V
-7V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
250
62 ± 5%
355 ± 7.5%
33 ± 7.5%
250
-
85 ± 5%
380 ± 7.5%
29 ± 7.5%
250
-
0
50
100
150
200
250
300
-7
-6
-5
-4
-3
-2
-1
0
Bias VGS (Volts)
B
ia
sVD
S
(
V
o
lt
s)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
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