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参数资料
| 型号： | 2N7614M1 |
| 元件分类： | JFETs |
| 英文描述： | 0.8 A, 250 V, 1.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB |
| 封装： | HERMETIC SEALED PACKAGE-14 |
| 文件页数： | 9/9页 |
| 文件大小： | 202K |
| 代理商： | 2N7614M1 |
www.irf.com
9
Pre-Irradiation
IRHLG77214, 2N7614M1
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 157mH
Peak IL = 0.8A, VGS = 10V
ISD ≤ 0.8A, di/dt ≤ 340A/s,
VDD ≤ 250V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2011
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