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参数资料
| 型号： | 2N7612M1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1800 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-036AB |
| 封装： | HERMETIC SEALED PACKAGE-14 |
| 文件页数： | 1/9页 |
| 文件大小： | 209K |
| 代理商： | 2N7612M1 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 4.5V, TC=25°C
Continuous Drain Current
1.8
ID @ VGS = 4.5V, TC=100°C Continuous Drain Current
1.1
IDM
Pulsed Drain Current
7.2
PD @ TC = 25°C
Max. Power Dissipation
1.4
W
Linear Derating Factor
0.01
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
97
mJ
IAR
Avalanche Current
1.8
A
EAR
Repetitive Avalanche Energy
0.14
mJ
dv/dt
Peak Diode Recovery dv/dt
11
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in/1.6mm from case for 10s)
Weight
1.3 (Typical)
g
oC
A
03/20/08
www.irf.com
1
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG77110
100K Rads (Si)
0.22
1.8A
IRHLG73110
300K Rads (Si)
0.22
1.8A
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHLG77110
LOGIC LEVEL POWER MOSFET
100V, Quad N-CHANNEL
THRU-HOLE (MO-036AB)
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Light Weight
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
MO-036AB
2N7612M1
PD-97178
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相关代理商/技术参数 |
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