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参数资料
型号： 2N7612M1
元件分类： 小信号晶体管
英文描述： 1800 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-036AB
封装： HERMETIC SEALED PACKAGE-14
文件页数： 2/9页
文件大小： 209K
代理商： 2N7612M1
IRHLG77110, 2N7612M1
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
1.8
ISM
Pulse Source Current (Body Diode)
—
7.2
VSD Diode Forward Voltage
—
1.2
V
Tj = 25°C, IS = 1.8A, VGS = 0V
trr
Reverse Recovery Time
—
100
ns
Tj = 25°C, IF = 1.8A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
223
nC
VDD ≤ 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
—
V
VGS = 0V, ID = 250A
BVDSS/TJ Temperature Coefficient of Breakdown —
0.11
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.22
VGS = 4.5V, ID = 1.1A
Resistance
VGS(th)
Gate Threshold Voltage
1.0
—
2.0
V
VDS = VGS, ID = 250A
VGS(th)/TJ Gate Threshold Voltage Coefficient
—
-4.4
—
mV/°C
gfs
Forward Transconductance
3.0
—
S
VDS = 10V, IDS = 1.1A
IDSS
Zero Gate Voltage Drain Current
—
1.0
VDS= 80V ,VGS= 0V
——
10
VDS = 80V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
Qg
Total Gate Charge
—
15
VGS = 4.5V, ID = 1.8A
Qgs
Gate-to-Source Charge
—
2.5
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
6.0
td(on)
Turn-On Delay Time
—
15
VDD = 50V, ID = 1.8A,
tr
Rise Time
—
20
VGS = 4.5V, RG = 7.5
td(off)
Turn-Off Delay Time
—
65
tf
Fall Time
—
25
LS + LD
Total Inductance
—
10
—
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
Ciss
Input Capacitance
—
653
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
119
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
2.7
—
nA
nH
ns
A
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
RthJA
Junction-to-Ambient
—
90
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Rg
Gate Resistance
—
16
—
f = 1.0MHz, open drain
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