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参数资料
| 型号： | 2N7612M1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1800 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-036AB |
| 封装： | HERMETIC SEALED PACKAGE-14 |
| 文件页数： | 3/9页 |
| 文件大小： | 209K |
| 代理商： | 2N7612M1 |
www.irf.com
3
Pre-Irradiation
IRHLG77110, 2N7612M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a. Typical Single Event Effect, Safe Operating Area
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation (Per Die)
Parameter
Up to 300K Rads (Si)1
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
—
V
VGS = 0V, ID = 250A
VGS(th)
Gate Threshold Voltage
1.0
2.0
VGS = VDS, ID = 250A
IGSS
Gate-to-Source Leakage Forward
—
100
nA
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
IDSS
Zero Gate Voltage Drain Current
—
10
A
VDS= 80V, VGS=0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
—
0.25
VGS = 4.5V, ID = 1.1A
RDS(on)
Static Drain-to-Source On-state
VSD
Diode Forward Voltage
—
1.2
V
VGS = 0V, ID = 1.8A
Resistance (MO-036AB)
—
0.22
VGS = 4.5V, ID = 1.1A
1. Part numbers IRHLG77110, IRHLG73110
0
20
40
60
80
100
120
-8
-7
-6
-5
-4
-3
-2
-1
0
VGS
VD
S
Br
I
Au
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(m)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-1V
-2V
-4V
-5V
-6V
-7V
-8V
Br
37
305
39
100
I
60
370
34
100
-
Au
84
390
30
100
-
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