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参数资料
| 型号： | 2SA1312 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 150K |
| 代理商： | 2SA1312 |
Data Sheet PU10005EJ01V0DS
5
2SC5741
VCE = 1 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
4
6
8
0
10
1
100
VCE = 2 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
8
6
4
2
0
10
1
100
VCE = 1 V
IC = 5 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
25
30
15
20
5
10
0
0.1
1
10
MAG
MSG
|S21e|
2
VCE = 1 V
IC = 15 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
25
30
15
20
5
10
0
0.1
1
10
MAG
MSG
|S21e|
2
VCE = 2 V
IC = 15 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
25
30
15
20
5
10
0
0.1
1
10
MAG
MSG
|S21e|
2
VCE = 2 V
IC = 5 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
25
30
15
20
5
10
0
0.1
1
10
MAG
MSG
|S21e|
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1312-BL(TE85L,F | 制造商:Toshiba 功能描述:PNP |
| 2SA1312-BL(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:PNP 120V TRANSISTOR. - Tape and Reel |
| 2SA1312-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1312GRTE85LF | 功能描述:两极晶体管 - BJT PNP Audio Amp VCEO -120V HFE 700 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1313-O(TE85L,F) | 功能描述:TRANS PNP 50V 500MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:Digi-Key 停止供應 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:500mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:250mV @ 10mA，100mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 100mA，1V 功率 - 最大值:200mW 频率 - 跃迁:200MHz 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:S-Mini 标准包装:1 |
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