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参数资料
| 型号： | 2SA1797G-A-TN3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封装： | HALOGEN FREE PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 163K |
| 代理商： | 2SA1797G-A-TN3-R |
2SA1797
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R208-029,E
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
DC
-2
A
Collector Current
PULSE(Note 1)
IC
-5
A
TO-92NL
1
W
SOT-223
0.8
W
SOT-89
0.5
W
Collector Power Dissipation
TO-252
PC
1.9
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Single pulse, PW=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC = -50μA
-50
V
Collector-Emitter Breakdown Voltage
BVCEO
IC = -1mA
-50
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -50μA
-6
V
Collector Cutoff Current
ICBO
VCB = -50V
-0.1
μA
Emitter Cutoff Current
IEBO
VEB = -5V
-0.1
μA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC/IB = -1A/-50mA
(Note)
-0.15 -0.35
V
DC Current Gain
hFE
VCE = -2V, IC=-0.5A
(Note)
120
400
Transition Frequency
fT
VCE = -2V, IE=0.5A, f=100MHz
200
MHz
Output Capacitance
Cob
VCB = -10V, IE=0A, f=1MHz
36
pF
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK
A
B
RANGE
120-240
200-400
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