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参数资料
| 型号： | 2SA1797G-A-TN3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封装： | HALOGEN FREE PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 163K |
| 代理商： | 2SA1797G-A-TN3-R |
2SA1797
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R208-029,E
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
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and reliable and may be changed without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1801 | Si, PNP, RF POWER TRANSISTOR |
| 2SA1802 | 3000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1804 | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SA1804-O | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SA1805-R | 10 A, 140 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1797T100P | 功能描述:两极晶体管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1797T100Q | 功能描述:两极晶体管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1804 | 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A |
| 2SA1804-O | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1804-R(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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