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参数资料
| 型号： | 2SA1955F-B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ESM, 2-2HA1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 140K |
| 代理商： | 2SA1955F-B |
2SA1955F
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955F
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
Type Name
G A
hFE Rank
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1955FVATPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT PNP Trans -0.4A LN -12V VCEO |
| 2SA1955FVBTPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM |
| 2SA19610QAHW | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA19620TU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 2SA1962-O | 功能描述:两极晶体管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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