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参数资料
| 型号： | 2SA1955F-B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ESM, 2-2HA1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 140K |
| 代理商： | 2SA1955F-B |
2SA1955F
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 15 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE (Note) VCE = 2 V, IC = 10 mA
300
1000
VCE (sat) (1) IC = 10 mA, IB = 0.5 mA
15
30
Collector-emitter saturation voltage
VCE (sat) (2) IC = 200 mA, IB = 10 mA
110
250
mV
Base-emitter saturation voltage
VBE (sat)
IC = 200 mA, IB = 10 mA
0.87
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 10 mA
80
130
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4.2
pF
Collector-emitter on resistance
Ron
IB = 1 mA, Vin = 1 Vrms, f = 1 kHz
0.9
Ω
Turn-on time
ton
40
Storage time
tstg
280
Switching time
Fall time
tf
IB1 = IB2 = 5 mA
65
ns
Note: hFE classification A: 300~600, B: 500~1000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1955FVATPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT PNP Trans -0.4A LN -12V VCEO |
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| 2SA19610QAHW | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA19620TU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 2SA1962-O | 功能描述:两极晶体管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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