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参数资料
| 型号： | 2SC5593 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CMPAK-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 171K |
| 代理商： | 2SC5593 |
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5606-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:3.3V 频率 - 跃迁:21GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 2GHz 增益:12.5dB 功率 - 最大值:115mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:60 @ 5mA，2V 电流 - 集电极（Ic）（最大值）:35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:- 标准包装:1 |
| 2SC5606-FB-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5606-T1-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:3.3V 频率 - 跃迁:21GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:60 @ 5mA，2V 电流 - 集电极（Ic）（最大值）:35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:SOT-523 标准包装:1 |
| 2SC5606-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5611 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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