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参数资料
| 型号： | 2SC5650 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, M23, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 18K |
| 代理商： | 2SC5650 |
NE681M23
NPN SILICON TRANSISTOR
NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
LOW NOISE FIGURE:
NF = 1.4 dB
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M23
PRELIMINARY DATA SHEET
PART NUMBER
NE681M23
EIAJ1 REGISTERED NUMBER
2SC5650
PACKAGE OUTLINE
M23
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
4.5
7
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
1.4
2.7
|S21E|2
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
10
12
hFE2
Forward Current Gain at VCE = 3 V, IC = 7 mA
80
145
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
A
0.8
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
A
0.8
CRE3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
0.9
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE681M23 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
ceramic substrate style "M23" package is ideal for today's
portable wireless applications. The NE681 is also available
in chip, Micro-x, and six different low cost plastic surface
mount package styles.
0.15
0.2
0.15
2
1
0.25
0.4
0.5
1.0
0.55
0.6
BOTTOM VIEW
3
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