2SJ350
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–120
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–6
A
Drain peak current
I
D(pulse)*
1
–12
A
Body to drain diode reverse drain current
I
DR
–6
A
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–120
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–250
AV
DS = –100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
—
0.5
0.7
I
D = –4 A, VGS = –10 V*
1
resistance
—
0.7
0.9
I
D = –4 A, VGS = –4 V*
1
Forward transfer admittance
|y
fs|
3.0
5.0
—
S
I
D = –4 A, VDS = –10 V*
1
Input capacitance
Ciss
—
900
—
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
—
265
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
65
—
pF
Turn-on delay time
t
d(on)
—
11
—
ns
I
D = –4 A, VGS = –10 V,
Rise time
t
r
—
45
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—
170
—
ns
Fall time
t
f
—80
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.2
—
V
I
F = –6 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
240
—
ns
I
F = –6 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test