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参数资料
| 型号： | 2SJ350 |
| 元件分类： | JFETs |
| 英文描述： | 0.9 ohm, POWER, FET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 44K |
| 代理商： | 2SJ350 |
2SJ350
3
40
30
20
10
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
DC
Operation
(Tc
=
25
°C)
10 s
100
s
1 ms
Operation in
this area is
limited by R DS(on)
Ta = 25 °C
PW
=
10
ms
(1shot)
–20
–10
–2
–1
–5
–0.2
–0.5
–0.1
–2
–5
–10
–20
–50
–100 –200
–10
–8
–6
–4
–2
0
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
–4
–8
–12
–16
–20
–4 V
–6 V
–10 V
–3 V
Pulse Test
V
= –2.5 V
GS
–3.5 V
–10
–8
–6
–4
–2
0
–1–2–3
–4
–5
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
75 °C
Tc = –25 °C
25 °C
V
= –10 V
Pulse Test
DS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ352 | POWER, FET |
| 2SJ351 | POWER, FET |
| 2SJ353 | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ353-AZ | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ355-T1-AZ | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ350-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ351 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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