参数资料
型号: 2SJ350
元件分类: JFETs
英文描述: 0.9 ohm, POWER, FET
封装: TO-220FM, 3 PIN
文件页数: 6/9页
文件大小: 44K
代理商: 2SJ350
2SJ350
6
–10
–8
–6
–4
–2
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
–10 V
–5 V
V
= 0, 5 V
GS
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
s
(t)
γ
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
θ
γ
θ
Tc = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
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相关代理商/技术参数
参数描述
2SJ350-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
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