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参数资料
| 型号： | 2SJ350 |
| 元件分类： | JFETs |
| 英文描述： | 0.9 ohm, POWER, FET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 44K |
| 代理商： | 2SJ350 |
2SJ350
4
–5
–4
–3
–2
–1
0
Gate to Source Voltage
V
(V)
GS
V
(V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
–2 A
–1 A
I
= –5 A
D
Pulse Test
–4
–8
–12
–16
–20
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
5
2
1
0.2
0.5
0.1
–0.1 –0.2
–0.5
–1
–2
–5
–10 –20
–10 V
V
= –4 V
GS
Pulse Test
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
D
I
= –3 A
–2 A
–3 A
V
= –4 V
GS
–1 A
Pulse Test
–10 V
–1, –2 A
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1
0.5
–0.1 –0.2
–0.5
–1
–2
–5
–10
75 °C
Tc = –25 °C
25 °C
V
= –10 V
Pulse Test
DS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ352 | POWER, FET |
| 2SJ351 | POWER, FET |
| 2SJ353 | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ353-AZ | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ355-T1-AZ | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ350-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ351 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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