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| 型号： | 2SJ649-AZ |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH -60V -20A TO-220 |
| 标准包装： | 500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 48 毫欧 @ 10A，10V |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1900pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 隔离片 |
| 供应商设备封装： | TO-220 隔离的标片 |
| 包装： | 散装 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
PART NUMBER
2SJ649
PACKAGE
Isolated TO-220
for solenoid, motor and lamp driver.
FEATURES
? Low on-state resistance:
R DS(on)1 = 48 m ? MAX. (V GS = –10 V, I D = –10 A)
R DS(on)2 = 75 m ? MAX. (V GS = –4.0 V, I D = –10 A)
? Low input capacitance:
C iss = 1900 pF TYP. (V DS = –10 V, V GS = 0 V)
? Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
–60
m 20
m 20
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
m 70
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T
P T
T ch
T stg
25
2.0
150
–55 to +150
W
W
°C
°C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
–20
40
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = –30 V, R G = 25 ? , V GS = –20 ? 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002
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相关代理商/技术参数 |
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|---|---|
| 2SJ650 | 功能描述:MOSFET P-CH 60V 12A TO-220ML RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ651 | 功能描述:MOSFET P-CH 60V 20A TO-220ML RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ651_03 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SJ651-S | 制造商:ON Semiconductor 功能描述: |
| 2SJ652 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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