参数资料
型号: 2SJ649-AZ
厂商: Renesas Electronics America
文件页数: 4/10页
文件大小: 0K
描述: MOSFET P-CH -60V -20A TO-220
标准包装: 500
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 48 毫欧 @ 10A,10V
闸电荷(Qg) @ Vgs: 38nC @ 10V
输入电容 (Ciss) @ Vds: 1900pF @ 10V
功率 - 最大: 2W
安装类型: 通孔
封装/外壳: TO-220-3 隔离片
供应商设备封装: TO-220 隔离的标片
包装: 散装
2SJ649
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Symbol
I DSS
I GSS
V GS(off)
Test Condtions
V DS = –60 V, V GS = 0 V
m 20 V, V DS = 0 V
V GS =
V DS = –10 V, I D = –1 mA
MIN.
–1.5
TYP.
–2.0
MAX.
– 10
m 10
–2.5
Unit
μ A
μ A
V
Forward Transfer Admittance
Note
| y fs |
V DS = –10 V, I D = –10 A
10
20
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Note
R DS(on)1
R DS(on)2
C iss
C oss
C rss
t d(on)
t r
t d(off)
V GS = –10 V, I D = –10 A
V GS = –4.0 V, I D = –10 A
V DS = –10 V
V GS = 0 V
f = 1 MHz
V DD = –30 V, I D = –10 A
V GS = –10 V
R G = 0 ?
38
47
1900
350
140
10
10
73
48
75
m ?
m ?
pF
pF
pF
ns
ns
ns
Fall Time
t f
17
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q G
Q GS
Q GD
V DD = –48 V
V GS = –10 V
I D = –20 A
38
7
10
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 20 A, V GS = 0 V
I F = 20 A, V GS = 0 V
di/dt = 100 A/ μ s
0.95
49
100
V
ns
nC
Note Pulsed: PW ≤ 350 μ s, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT 2 SWITCHING TIME
PG
V GS = –20 → 0 V
R G = 25 ?
50 ?
L
V DD
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS ( ? )
10%
0
V GS
90%
V DS ( ? )
?
I D
I AS
BV DSS
V DS
V GS ( ? )
0
V DS
Wave Form
V DS
0
90%
10% 10%
90%
V DD
Starting T ch
τ
τ = 1 μ s
Duty Cycle ≤ 1%
t d(on)
t on
t r
t d(off)
t off
t f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = ? 2 mA
R L
2
PG.
50 ?
V DD
Data Sheet D16332EJ1V0DS
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