- 您现在的位置：买卖IC网 > PDF目录33476 > 2SJ669 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ669 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 231K |
| 代理商： | 2SJ669 |
2SJ669
2004-08-18
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
A
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Drainsource breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
35
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2.5 A
—
0.16
0.25
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.12
0.17
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.5
5.0
—
S
Input capacitance
Ciss
—
700
—
Reverse transfer capacitance
Crss
—
60
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
90
—
pF
Rise time
tr
—
14
—
Turnon time
ton
—
24
—
Fall time
tf
—
14
—
Switching time
Turnoff time
toff
—
95
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
15
—
Gatesource charge
Qgs
—
11
—
Gatedrain (“Miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
—
4
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
40
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A / S
—
32
—
nC
Marking
Duty <= 1%, tw = 10 s
10 V
0 V
VGS
RL =
12
VDD 30 V
ID = 2.5 A
Output
4.
7
J669
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ673 | 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ680 | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ687 | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E1-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ669_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Relay Drive, DC/DC Converter and Motor Drive |
| 2SJ670 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ670-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 100V 1.5A SOT89 |
| 2SJ673-AZ | 功能描述:MOSFET P-CH -60V -36A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ676 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
发布紧急采购，3分钟左右您将得到回复。