- 您现在的位置：买卖IC网 > PDF目录33476 > 2SJ669 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ669 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 231K |
| 代理商： | 2SJ669 |
2SJ669
2004-08-18
5
EAS – Tch
Channel temperature (initia) Tch (°C)
Av
al
an
ch
e
ner
gy
E
AS
(m
J)
0
25
10
30
50
40
50
75
100
125
150
20
rth tw
Pulse width tw (s)
N
or
m
aliz
ed
tr
an
si
en
tt
he
rm
al
im
peda
nc
e
r th
(t)
/R
th
(
ch-
a)
Drain
source voltage VDS (V)
Safe operating area
0.1
10
100
D
rai
n
cu
rr
en
t
I
D
(A)
0.1
10
100
0.001
0.01
1
0.001
100
1 m
10 m
100 m
1
10
100
0.01
0.1
1
10
T
PDM
t
Duty
= t/T
Rth (ch-a) = 104°C/W
Duty
= 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
ID max (Pulsed) *
DC operation
Ta
= 25°C
1 ms *
VDSS max
100
s *
*:Single nonrepetitive pulse
Tc = 25°C
Curves
must
be
derated
linearly
with
increase
in
temperature.
ID max (Continuous)
RG = 25
VDD = 25 V, L = 2.2 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
Test circuit
Waveform
IAR
BVDSS
VDD
VDS
15 V
0 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ673 | 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ680 | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ687 | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E1-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ669_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Relay Drive, DC/DC Converter and Motor Drive |
| 2SJ670 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ670-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 100V 1.5A SOT89 |
| 2SJ673-AZ | 功能描述:MOSFET P-CH -60V -36A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ676 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
发布紧急采购，3分钟左右您将得到回复。