参数资料
型号: 2SJ669
元件分类: JFETs
英文描述: 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-8M1B, 3 PIN
文件页数: 4/6页
文件大小: 231K
代理商: 2SJ669
2SJ669
2004-08-18
4
RDS (ON) Ta
Dr
ai
n
so
ur
ce
O
N
-r
es
is
tanc
e
R
DS
(
O
N
)
(
)
Ambient temperature Ta (°C)
0
0.4
0.1
0.3
0.2
40
80
160
0
40
120
80
Common source
Pulse test
ID = 5 A
2.5
1.2
IDR VDS
D
rain
re
ve
rs
e
cu
rr
ent
I DR
(
A
)
Drain
source voltage VDS (V)
0.1
10
0.2
0
1.2
0.6
0.4
0.8
1.0
Common source
Ta
= 25°C
Pulse test
10
5
3
1
VGS = 0 V
Ambient temperature Ta (°C)
PD Ta
D
rain
po
w
er
di
ss
ip
at
ion
P
D
(
W
)
2.0
0.5
1.0
1.5
0
80
200
40
160
Vth Ta
Gat
et
hre
shold
vo
ltage
V
th
(V)
Ambient temperature Ta (°C)
0
80
0
40
80
120
160
40
2.0
0.4
1.2
0.8
1.6
Common source
VDS = 10 V
ID = 1 mA
Pulse test
C
apac
ita
nc
e
C
(p
F
)
Capacitance – VDS
Drain
source voltage VDS (V)
10
100
1000
10000
0.1
1
10
100
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
1
VGS = 10 V
VGS = 4 V
5
2.5
1.2
120
Total gate charge Qg (nC)
Dr
ai
n
sourc
ev
ol
tage
V
DS
(
V
)
Dynamic input/output
characteristics
Ga
te
so
ur
ce
vo
lta
ge
V
GS
(
V
)
50
40
0
30
20
10
0
25
30
10
5
10
5
20
25
0
15
VGS
VDS
VDD = 48 V
12V
24V
Common source
ID = 5 A
Ta
= 25°C
Pulse test
20
15
相关PDF资料
PDF描述
2SJ673 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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