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参数资料
| 型号： | 2SJ669 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 231K |
| 代理商： | 2SJ669 |
2SJ669
2004-08-18
3
ID – VDS
D
ra
in
cu
rr
ent
I
D
(
A
)
Drain
source voltage VDS (V)
0
5
1
3
2
4
0
0.4
2.0
0.8
1.2
1.6
10
8
6
2.8
3.5
4.
VGS = 2.5V
Common source
Ta
= 25°C
Pulse test
ID – VDS
D
ra
in
cu
rr
ent
I
D
(
A
)
Drain
source voltage VDS (V)
0
10
2
6
4
8
2
0
10
4
6
8
10
8
6
4
3.5
3
VGS = 2.5 V
Common source
Ta
= 25°C
Pulse test
ID – VGS
D
ra
in
cu
rr
ent
I
D
(A)
Gate
source voltage VGS (V)
0
10
2
6
8
1
0
5
3
4
100
25
Ta
= 55°C
Common source
VDS = 10 V
Pulse test
VDS – VGS
Dr
ai
n
sour
ce
v
ol
tag
e
V
DS
(
V
)
Gate
source voltage VGS (V)
0
2.0
0.4
1.2
0.8
1.6
4
0
20
8
12
16
5
2.5
ID = 1.2 A
Common source
Ta
= 25°C
Pulse test
Yfs ID
F
orw
ar
dt
ran
sf
er
adm
itt
anc
e
Y
fs
(S
)
Drain current ID (A)
0.1
100
10
1
0.1
100
1
Common source
VDS = 10 V
Pulse test
Ta
= 55°C
25
100
RDS (ON) ID
Dr
ai
n
sour
ce
O
N
-r
es
is
tanc
e
R
DS
(
O
N
)
(
)
Drain current ID (A)
0
0.4
0.5
0
2
10
Common source
Ta
= 25°C
Pulse test
10
4
3
4
2
0.3
0.1
0.2
6
8
VGS = 10V
4 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ669_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Relay Drive, DC/DC Converter and Motor Drive |
| 2SJ670 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ670-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 100V 1.5A SOT89 |
| 2SJ673-AZ | 功能描述:MOSFET P-CH -60V -36A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ676 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
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