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参数资料
| 型号： | 2SJ673 |
| 元件分类： | JFETs |
| 英文描述： | 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, MP-45F, 3 PIN |
| 文件页数： | 10/10页 |
| 文件大小： | 282K |
| 代理商： | 2SJ673 |
Data Sheet D17210EJ1V0DS
7
2SJ673
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
φ
2.7±0.2
1.3±0.2
0.7±0.1
2.54
1.5±0.2
12 3
4±0.2
13.5
MIN.
12.0±0.2
15.0±0.3
3±0.1
4.5±0.2
2.5±0.1
0.65±0.1
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this debice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ673-AZ | 功能描述:MOSFET P-CH -60V -36A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ676 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
| 2SJ676_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator, DC/DC Converter and |
| 2SJ680 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Applications |
| 2SJ680(Q) | 制造商:Toshiba 功能描述:Pch -200V -2.5A 2.0@10V New PW-Mold2 Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch ,V=200V,I=2.5A,PW-Mold2 制造商:Toshiba 功能描述:Trans MOSFET P-CH 200V 2.5A 3-Pin(3+Tab) PW-Mold2 |
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