参数资料
型号: 2SJ673
元件分类: JFETs
英文描述: 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220, MP-45F, 3 PIN
文件页数: 4/10页
文件大小: 282K
代理商: 2SJ673
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ673
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17210EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SJ673 is P-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 20 m
MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 31 m
MAX. (VGS = 4.0 V, ID = 18 A)
Low Ciss: Ciss = 4600 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m36
A
Drain Current (pulse)
Note1
ID(pulse)
m144
A
Total Power Dissipation (TC = 25°C)
PT1
32
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
36
A
Single Avalanche Energy
Note2
EAS
130
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD =
30 V, RG = 25 , VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ673
Isolated TO-220 (MP-45F)
(Isolated TO-220)
相关PDF资料
PDF描述
2SJ680 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ687 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SJ687-ZK-E2-AY 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SJ687-ZK-E1-AY 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SJ687-ZK-E2-AY 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
相关代理商/技术参数
参数描述
2SJ673-AZ 功能描述:MOSFET P-CH -60V -36A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SJ676 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications
2SJ676_09 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator, DC/DC Converter and
2SJ680 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Applications
2SJ680(Q) 制造商:Toshiba 功能描述:Pch -200V -2.5A 2.0@10V New PW-Mold2 Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch ,V=200V,I=2.5A,PW-Mold2 制造商:Toshiba 功能描述:Trans MOSFET P-CH 200V 2.5A 3-Pin(3+Tab) PW-Mold2