参数资料
型号: 2SJ673
元件分类: JFETs
英文描述: 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220, MP-45F, 3 PIN
文件页数: 8/10页
文件大小: 282K
代理商: 2SJ673
Data Sheet D17210EJ1V0DS
5
2SJ673
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
10
20
30
40
50
-50
0
50
100
150
ID =
18 A
Pulsed
VGS =
4.0 V
4.5 V
10 V
Tch - Channel Temperature - °C
I
F-
Diode
Fo
rwa
rd
Curren
t-
A
-0.001
-0.01
-0.1
-1
-10
-100
-1000
0
-0.5
-1
-1.5
-2
Pulsed
0 V
VGS =
10 V
4 V
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s,
C
os
s,
C
rss
-Capacitance
-pF
100
1000
10000
100000
-0.1
-1
-10
-100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
t
d(
on)
,t
r,t
d(
off)
,t
f-
Swi
tching
Time
-ns
1
10
100
1000
-0.1
-1
-10
-100
VDD =
30 V
VGS =
10 V
RG = 0
td(off)
td(on)
tf
tr
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
V
DS
-
D
rain
to
So
urce
Voltage
-
V
0
5
10
15
20
25
30
35
40
45
50
55
60
0
2040
6080
100
0
1
2
3
4
5
6
7
8
9
10
11
12
ID =
25 A
VDS
VGS
VDD =
48 V
30 V
12 V
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
t
rr-
Rev
ers
eRec
ov
ery
Ti
me
-ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
VGS = 0 V
IF - Diode Forward Current - A
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