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参数资料
| 型号： | 2SJ673 |
| 元件分类： | JFETs |
| 英文描述： | 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, MP-45F, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 282K |
| 代理商： | 2SJ673 |
Data Sheet D17210EJ1V0DS
3
2SJ673
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Pe
rcentage
of
Rated
Powe
r-
%
0
20
40
60
80
100
120
0
25
50
75
100 125
150 175
TC - Case Temperature -
°C
P
T-
Total
Powe
r
Dissipation
-
W
0
10
20
30
40
50
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
-
Dr
ain
Cur
rent
-
A
-0.1
-1
-10
-100
-1000
-0.1
-1
-10
-100
100
s
1 ms
100 ms
10 ms
Power Disipation Limited
RDS(on) Limited
PW = 10
s
TC = 25°C
Single pulse
ID(DC)
DC
ID(pulse)
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient
T
hermal
Resistance
-
°C/W
0.01
0.1
1
10
100
Rth(ch-A) = 62.5°C/W
Rth(ch-C) = 3.9°C/W
Single pulse
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ673-AZ | 功能描述:MOSFET P-CH -60V -36A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ676 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
| 2SJ676_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator, DC/DC Converter and |
| 2SJ680 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Applications |
| 2SJ680(Q) | 制造商:Toshiba 功能描述:Pch -200V -2.5A 2.0@10V New PW-Mold2 Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch ,V=200V,I=2.5A,PW-Mold2 制造商:Toshiba 功能描述:Trans MOSFET P-CH 200V 2.5A 3-Pin(3+Tab) PW-Mold2 |
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