- 您现在的位置：买卖IC网 > Datasheet目录378 > 2SJ687-ZK-E1-AY (Renesas Electronics America)MOSFET P-CH -20V -20A TO-252 Datasheet资料下载
参数资料
| 型号： | 2SJ687-ZK-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH -20V -20A TO-252 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 10A，4.5V |
| 闸电荷(Qg) @ Vgs： | 57nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4400pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 标准包装 |
| 其它名称： | 2SJ687-ZK-E1-AYDKR |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
? Low on-state resistance
R DS(on)1 = 7.0 m Ω MAX. (V GS = ? 4.5 V, I D = ? 10 A)
R DS(on)2 = 9.0 m Ω MAX. (V GS = ? 3.0 V, I D = ? 10 A)
R DS(on)3 = 20 m Ω MAX. (V GS = ? 2.5 V, I D = ? 10 A)
? 2.5 V drive available
? Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
Note
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
0.27 g TYP.
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-252)
Drain Current (pulse)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
V DSS
V GSS
I D(DC)
I D(pulse)
P T1
P T2
T ch
T stg
? 20
m 12
m 20
m 60
36
1.0
150
? 55 to + 150
V
V
A
A
W
W
° C
° C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
? 20
40
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = ? 10 V, R G = 25 Ω , V GS = ? 12 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2094TL | MOSFET N-CH 60V 2A DPAK |
| 2SK3018T106 | MOSFET N-CH 30V .1A SOT-323 |
| 2SK3019TL | MOSFET N-CH 30V .1A SOT416 |
| 2SK3479-Z-E2-AZ | MOSFET 100V N-CH TO-263 |
| 2SK3480-AZ | MOSFET N-CH 100V MP-25/TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ687-ZK-E2-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ73 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 5MA I(DSS) |
| 2SJ74 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
| 2SJ74_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Low Noise Audio Amplifier Applications |
| 2SJ74BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 6MA I(DSS) | TO-92 |
发布紧急采购，3分钟左右您将得到回复。