参数资料
型号: 2SJ687-ZK-E1-AY
厂商: Renesas Electronics America
文件页数: 6/10页
文件大小: 0K
描述: MOSFET P-CH -20V -20A TO-252
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 10A,4.5V
闸电荷(Qg) @ Vgs: 57nC @ 4.5V
输入电容 (Ciss) @ Vds: 4400pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252(MP-3ZK)
包装: 标准包装
其它名称: 2SJ687-ZK-E1-AYDKR
2SJ687
-60
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
FORWARD TRANSFER CHARACTERISTICS
V DS = ? 10 V
V GS = ? 4.5 V
-10
Pulsed
-40
? 2.5 V
-1
-0.1
T ch = ? 55 ° C
? 25 ° C
-20
0
Pulsed
-0.01
-0.001
-0.0001
25 ° C
75 ° C
125 ° C
150 ° C
0
-1
-2
-3
0
-1
-2
-3
V DS - Drain to Source Voltage - V
V GS - Gate to Source Voltage - V
<R>
-2
-1.5
-1
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
10
1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T ch = ? 55 ° C
? 25 ° C
-0.5
0
V DS = ? 10 V
I D = ? 1 mA
0.1
0.01
25 ° C
75 ° C
125 ° C
150 ° C
V DS = ? 10 V
Pulsed
-75
-25
25
75
125
175
-0.001
-0.01
-0.1
-1
-10
-100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
40
I D = ? 10 A
Pulsed
50
Pulsed
40
30
30
20
20
10
0
10
0
V GS = ? 2.5 V
? 4.5 V
0
-5
-10
-15
-0.1
-1
-10
-100
4
V GS - Gate to Source Voltage - V
Data Sheet D18719EJ2V0DS
I D - Drain Current - A
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