参数资料
型号: 2SK1157
元件分类: JFETs
英文描述: 0.8 ohm, POWER, FET, TO-220AB
文件页数: 2/9页
文件大小: 42K
代理商: 2SK1157
2SK1157, 2SK1158
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1157
V
DSS
450
V
2SK1158
500
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
7A
Drain peak current
I
D(pulse)*
1
28
A
Body to drain diode reverse drain current
I
DR
7A
Channel dissipation
Pch*
2
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW 10 s, duty cycle 1%
2. Value at T
C =
25°C
相关PDF资料
PDF描述
2SK1158 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1158 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1157 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1157 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1161 0.8 ohm, POWER, FET
相关代理商/技术参数
参数描述
2SK1157(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1157-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1158 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK1158-E 制造商:Renesas Electronics Corporation 功能描述: