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参数资料
| 型号： | 2SK1157 |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET, TO-220AB |
| 文件页数： | 6/9页 |
| 文件大小： | 42K |
| 代理商： | 2SK1157 |
2SK1157, 2SK1158
6
5,000
1.0
20
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns) 2,000
200
0.5
2
10
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
0.2
100
5
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
5,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
100
10
30
40
5
1,000
Typical Capacitance vs.
Drain to Source Voltage
0
Crss
Ciss
Coss
VGS = 0
f = 1 MHz
10
500
16
40
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
824
32
0
200
300
VDS
100 V
20
16
4
0
8
12
VDD = 100 V
250 V
400 V
ID = 7 A
250 V
VDD = 400 V
VGS
Gate
to
Source
Voltage
V
GS
(V)
1.0
20
Drain Current ID (A)
Switching
Time
t
(ns)
500
50
0.5
2
10
100
200
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
0.2
20
5
Switching Characteristics
td (off)
tr
td (on)
tf
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1161 | 0.8 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1157(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1157-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1158 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1158-E | 制造商:Renesas Electronics Corporation 功能描述: |
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