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参数资料
| 型号： | 2SK1157 |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET, TO-220AB |
| 文件页数： | 4/9页 |
| 文件大小： | 42K |
| 代理商： | 2SK1157 |
2SK1157, 2SK1158
4
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
50
5
0.5
0.05
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
20
1.0
0.1
1
3
30
300
Ta = 25°C
2SK1157
2SK1158
10
s
100
s
1 ms
DC
Operation
(T
C =
25°C)
PW
=
10
ms
(1
shot)
Operation
in
this
Area
is
Limited
by
R
DS
(on)
10
2
0.2
20
50
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
16
4
10
30
40
0
8
12
VGS = 4 V
6 V
10 V
7 V
5 V
Pulse Test
20
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
16
4
26
8
–25°C
0
8
12
VDS = 20 V
Pulse Test
75°C
TC = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1161 | 0.8 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1157(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1157-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1158 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1158-E | 制造商:Renesas Electronics Corporation 功能描述: |
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