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参数资料
| 型号： | 2SK1157 |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET, TO-220AB |
| 文件页数： | 5/9页 |
| 文件大小： | 42K |
| 代理商： | 2SK1157 |
2SK1157, 2SK1158
5
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
ID = 2 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
Pulse Test
10 A
5
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2
0.1
1.0
5
20
0.5
1.0
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 10 V
Pulse Test
15 V
0.2
0.05
10
2.0
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
D
S
(on)
(
)
1.6
0.4
0
80
120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
2, 5 A
ID = 10 A
–40
50
0.5
10
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
20
2
1.0
5
0.5
5
10
Forward Transfer Admittance
vs. Drain Current
VDS = 20 V
Pulse Test
0.1
1.0
2
–25°C
TC = 25°C
75°C
0.2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1161 | 0.8 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1157(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1157-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1158 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1158-E | 制造商:Renesas Electronics Corporation 功能描述: |
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