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参数资料
| 型号： | 2SK1157 |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET, TO-220AB |
| 文件页数： | 7/9页 |
| 文件大小： | 42K |
| 代理商： | 2SK1157 |
2SK1157, 2SK1158
7
20
0.8
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A) 16
0.4
1.2
1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
4
5, 10 V
VGS = 0, –10 V
3
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pulse
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 2.08°C/W, T
C = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
Vout Monitor
RL
50
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin
10 %
90 %
10 %
td (on)
td (off)
tr
tf
Vout
10 %
Wavewforms
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1161 | 0.8 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1157(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1157-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1158 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1158-E | 制造商:Renesas Electronics Corporation 功能描述: |
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