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参数资料
| 型号： | 2SK3307 |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, MP-88, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 252K |
| 代理商： | 2SK3307 |
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MOS FIELD EFFECT TRANSISTOR
2SK3307
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14129EJ4V0DS00 (4th edition)
Date Published
November 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2000
DESCRIPTION
The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 9.5 m
Ω MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 14 m
Ω MAX. (VGS = 4.0 V, ID = 35 A)
Low Ciss: Ciss = 4650 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3307
TO-3P
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Drain Current (DC)
ID(DC)
±70
A
Drain Current (pulse)
Note1
ID(pulse)
±280
A
Total Power Dissipation (TC = 25
°C)
PT1
120
W
Total Power Dissipation (TA = 25
°C)
PT2
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
45
A
Single Avalanche Energy
Note2
EAS
202
mJ
Notes 1. PW
≤ 10
μs, Duty cycle ≤ 1%
2. Starting Tch = 25
°C, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.04
°C/W
Channel to Ambient
Rth(ch-A)
41.7
°C/W
(TO-3P)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3309(2-10S1B) | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3310 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3316 | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3324-A | 6 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3325-AZ | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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