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参数资料
| 型号： | 2SK3307 |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, MP-88, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 252K |
| 代理商： | 2SK3307 |
Data Sheet D14129EJ4V0DS
2
2SK3307
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 35 A
30
47
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 35 A
7.5
9.5
m
Ω
RDS(on)2
VGS = 4.0 V, ID = 35 A
10.5
14
m
Ω
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
4650
pF
Output Capacitance
Coss
780
pF
Reverse Transfer Capacitance
Crss
380
pF
Turn-on Delay Time
td(on)
ID = 35 A, VGS = 10 V, VDD = 30 V,
90
ns
Rise Time
tr
RG = 10
Ω
1260
ns
Turn-off Delay Time
td(off)
270
ns
Fall Time
tf
370
ns
Total Gate Charge
QG
ID = 70 A , VDD = 48 V, VGS = 10 V
90
nC
Gate to Source Charge
QGS
14
nC
Gate to Drain Charge
QGD
24
nC
Body Diode Forward Voltage
VF(S-D)
IF = 70 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 70 A, VGS = 0 V,
60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
110
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
≤ 1 %
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
VGS(on)
ID
ton
toff
td(on)
tr
td(off)
tf
10 %10 %
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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