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参数资料
| 型号： | 2SK3307 |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, MP-88, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 252K |
| 代理商： | 2SK3307 |
Data Sheet D14129EJ4V0DS
5
2SK3307
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
50
5
10
15
0
50
100
150
ID = 35 A
20
25
10 V
VGS = 4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.8
1.2
1.6
ISD
-
Diode
Forward
Current
-
A
0
2.0
VSD - Source to Drain Voltage - V
0.4
Pulsed
1
10
100
1000
VGS = 10 V
VGS = 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
0.1
1000
10000
100000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
100
10
1
0.1
1000
10000
10
100
tf
tr
td(on)
td(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
μ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
00
0
40
60
20
80
100 120
140 160
20
40
60
80
100
2
4
VDS
6
10
8
VGS
VDD = 48 V
30 V
12 V
ID = 70 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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