参数资料
型号: 2SK3307
元件分类: JFETs
英文描述: 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-3P, MP-88, 3 PIN
文件页数: 9/10页
文件大小: 252K
代理商: 2SK3307
Data Sheet D14129EJ4V0DS
6
2SK3307
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
10
100
1000
1 m10 m
VDD = 30 V
RG = 25
Ω
VGS = 20 V
→ 0 V
IAS = 45 A
10
μ
100
μ
1
E
AS = 202
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C
Energy
Derating
Factor
-
%
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
VDD = 30 V
RG = 25
Ω
VGS = 20 V
→ 0 V
IAS
≤ 45 A
相关PDF资料
PDF描述
2SK3309(2-10S1B) 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3310 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3316 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3324-A 6 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3325-AZ 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK3307-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P
2SK3309 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications
2SK3309(Q) 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3309(TE24L,Q) 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3309_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications