参数资料
型号: 2SK3357
元件分类: JFETs
英文描述: 75 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-3P, MP-88, 3 PIN
文件页数: 2/8页
文件大小: 152K
代理商: 2SK3357
Data Sheet D14134EJ5V0DS
2
2SK3357
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 38 A
4.6
5.8
m
Ω
RDS(on)2
VGS = 4.0 V, ID = 38 A
6.1
8.8
m
Ω
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 38 A
38
72
S
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0V
±10
μA
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
9800
pF
Output Capacitance
Coss
1500
pF
Reverse Transfer Capacitance
Crss
630
pF
Turn-on Delay Time
td(on)
ID = 38 A, VGS = 10 V, VDD = 30 V,
105
ns
Rise Time
tr
RG = 10
Ω
1350
ns
Turn-off Delay Time
td(off)
500
ns
Fall Time
tf
480
ns
Total Gate Charge
QG
ID = 75 A , VDD = 48 V, VGS = 10 V
170
nC
Gate to Source Charge
QGS
28
nC
Gate to Drain Charge
QGD
46
nC
Body Diode Forward Voltage
VF(S-D)
IF = 75 A, VGS = 0 V
0.96
V
Reverse Recovery Time
trr
IF = 75 A, VGS = 0 V,
64
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
130
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数
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