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参数资料
| 型号： | 2SK3357 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, MP-88, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 152K |
| 代理商： | 2SK3357 |
Data Sheet D14134EJ5V0DS
3
2SK3357
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
50
75
100
125
175
150
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
1000
1
10
100
TC = 25C
Single Pulse
ID(pulse)
RDS(on)
Limited
(at
V
GS
= 10
V
)
ID(DC)
PW
= 10
μs
100
μs
1 ms
0.1
DC
Po
wer
Dissipation
Limited
10
ms
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(ch-C) = 0.83 C/W
μ
Rth(ch-A) = 41.7 C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3358 | 55 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3359-Z | 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3359-S | 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3373 | 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3376MFV | 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3357-A | 制造商:Renesas Electronics 功能描述:Nch 60V 75A 5.8m@10V TO3P Cut Tape 制造商:Renesas Electronics 功能描述:Nch 60V 75A 5.8m@10V TO3P Bulk 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,4.6m ohm,TO-3P |
| 2SK3358 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3358-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3358-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3359 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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