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参数资料
| 型号： | 2SK3756 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, 2-5K1D, SC-62, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 140K |
| 代理商： | 2SK3756 |
2SK3756
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3756
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Output power: PO =32dBmW (typ)
Gain: GP = 12dB (typ)
Drain efficiency: ηD = 60% (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
7.5
V
Gain-source voltage
VGSS(Note 1)
3
V
Drain current
ID
1
A
Power dissipation
PD (Note 2)
3
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
45~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Operating Ranges: 0~3V
Note 2: Tc = 25°C (When mounted on a 0.8 mm glass epoxy PCB)
Marking
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1D
Weight: 0.05 g (typ.)
1
W
D
2
3
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Lot No.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3770-01MR | 26 A, 120 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3811-ZP | 110 A, 40 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3813-Z | 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3813 | 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3822 | 52 A, 100 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3756(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 7.5V 1A 470MHz PW-Mini |
| 2SK3757(Q) | 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3758 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
| 2SK3758(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A TO-220AB |
| 2SK3758(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 5A Rdson Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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