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参数资料
| 型号： | 2SK3756 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, 2-5K1D, SC-62, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 140K |
| 代理商： | 2SK3756 |
2SK3756
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
PO
31
32
dBmW
Drain efficiency
ηD
50
60
%
Power gain
GP
VDS = 4.5 V,
Iidle = 200 mA (VGS = adjust),
f
= 470 MHz, Pi = 20dBmW,
12
dB
Threshold voltage
Vth
VDS = 4.5 V, ID =0.5 mA
0.95
1.45
V
Drain cut-off current
IDSS
VDS = 10 V, VGS = 0 V
10
μA
Gate-source leakage current
IGSS
VGS = 3 V, VDS = 0 V
5
μA
Load Mismatch
(Note 3)
VDS = 4.5 V, f = 470 MHz,
Pi = 20dBmW,
Po = 31dBmW (VGS = adjust),
VSWR LOAD 10:1 all phase
No Degradation
Note 3: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f
= 470 MHz, VDS = 4.5 V, Iidle = 200 mA, Pi = 20 dBmW)
Pi
PO
C4
ZG = 50 Ω
C8
L2
C6
L1
R1
VGS
VDS
C2
C3
C5
ZL = 50 Ω
C1: 20 pF
C2: 17 pF
C3: 1 pF
C4: 2200 pF
C5: 2200 pF
C6: 10000 pF
C7: 2200 pF
C8: 10000 pF
L1:
φ0.6 mm enamel wire, 5.5ID, 5T
L2:
φ0.6 mm enamel wire, 5.5ID, 7T
Line: 2mm
R1: 6.8 k
Ω
R2: 56
Ω
C1
C7
R2
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相关代理商/技术参数 |
参数描述 |
|---|---|
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