- 您现在的位置：买卖IC网 > PDF目录55799 > 2SK3767 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3767 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 192K |
| 代理商： | 2SK3767 |
2SK3767
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 1 A
3.3
4.5
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 1 A
0.8
1.6
S
Input capacitance
Ciss
320
Reverse transfer capacitance
Crss
30
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
100
pF
Rise time
tr
15
Turn-on time
ton
55
Fall time
tf
20
Switching time
Turn-off time
toff
80
ns
Total gate charge
Qg
9
Gate-source charge
Qgs
5
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 2 A
4
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
2
A
Pulse drain reverse current
(Note 1)
IDRP
5
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/μs
3.5
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K3767
Part No. (or abbreviation code)
10 V
ID = 1A
Output
Duty ≤ 1%, tw = 10 μs
RL =
0 V
VGS
VDD 200 V
50
Ω
200
Ω
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3827 | 40 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3835 | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3846 | 26 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3857TV-A | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3889-01L | 9 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3767(Q) | 功能描述:MOSFET N-Ch 600V 2A Rdson 4.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3767(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 600V, 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3767(S4TETV,X,M | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3767(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3767(STA4,Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。