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参数资料
| 型号： | 2SK3767 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 192K |
| 代理商： | 2SK3767 |
2SK3767
2009-09-29
3
0
2
4
6
8
10
2
5
55
25
Tc=100℃
3
1
4
Gate-source voltage VGS
(V)
ID – VGS
Drain
current
I
D
(A)
Common source
VDS = 20 V
Pulse test
0
12
16
20
0
ID = 2A
4
12
16
20
0.5
1
8
4
8
Drain
current
volt
age
V
DS
(V)
Gate－source voltage VGS
(V)
VDS – VGS
Common source
Tc
= 25℃
Pulse test
4
3
2
1
0
8
20
4.5
4.75
5.25
10
5
16
12
4
6
5.5
Drain-source voltage VDS
(V)
ID – VDS
Drain
current
I
D
(A)
Common source
Tc
= 25°C
Pulse test
24
VGS = 4V
0.01
1
10
25
100
Tc
= 55°C
1
10
Drain current ID (A)
Yfs – ID
Common source
VDS = 20 V
Pulse test
Forwa
rd
tr
ansfer
admitt
ance
Y
fs
(S)
0.1
0.01
Drain current ID (A)
RDS (ON) – ID
Drain
source
ON
resist
ance
R
DS
(
O
N
)
(
Ω
)
Common source
Tc
= 25°C
Pulse test
VGS=10V
0.01
1
10
1
100
10
0.1
2
1.2
0.8
0
1.6
0.4
0
4
8
12
16
VGS = 4V
4.5
5
4.75
5.25
6
10
20
5.5
Drain-source voltage VDS
(V)
ID – VDS
Drain
current
I
D
(A)
24
Common source
Tc
= 25°C
Pulse test
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PDF描述 |
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| 2SK3846 | 26 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3767(Q) | 功能描述:MOSFET N-Ch 600V 2A Rdson 4.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3767(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 600V, 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3767(S4TETV,X,M | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3767(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3767(STA4,Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
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