参数资料
型号: 2SK3787-01MR
厂商: FUJI ELECTRIC CO LTD
元件分类: JFETs
英文描述: 4.2 A, 800 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 2/4页
文件大小: 117K
代理商: 2SK3787-01MR
2
Characteristics
2SK3787-01MR
FUJI POWER MOSFET
0
4
8
1216
20
24
2832
0
1
2
3
4
5
6
7
8
20V
10V
8V
6.5V
6.0V
ID
[A
]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
s pulse test,Tch=25 °C
VGS=5.5V
01
23
456
789
10
0.01
0.1
1
10
ID[
A
]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
s pulse test,VDS=25V,Tch=25°C
0.01
0.1
1
10
0.1
1
10
gf
s
[
S
]
ID [A]
Typical Transconductance
gfs=f(ID):80
s pulse test,VDS=25V,Tch=25°C
012345
67
2.5
3.0
3.5
4.0
4.5
5.0
RDS
(on
)[
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
s pulse test,Tch=25°C
10V
20V
8V
6.5V
6.0V
VGS=5.5V
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
RDS
(on
)[
]
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=2.1A,VGS=10V
0
255075
100
125
150
0
5
10
15
20
25
30
35
40
45
50
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
°C]
相关PDF资料
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2SK3797 13 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
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