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参数资料
| 型号： | 2SK3794-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 10/10页 |
| 文件大小： | 247K |
| 代理商： | 2SK3794-Z |
Data Sheet D16778EJ3V0DS
7
2SK3794
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
<R> 2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note The depth of notch at the top of the fin is from 0
to 0.2 mm.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3796-2-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3796-3-TL-E | 功能描述:JFET Junction FET 30V 10mA Nch SMCP RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3796-4-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3797 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 600V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 600V, TO-220SIS |
| 2SK3797(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba 功能描述:Nch 600V 13A 0.43@10V TO220SIS Bulk |
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