- 您现在的位置：买卖IC网 > PDF目录33503 > 2SK3794-Z 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA PDF资料下载
参数资料
| 型号： | 2SK3794-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 247K |
| 代理商： | 2SK3794-Z |
Data Sheet D16778EJ3V0DS
4
2SK3794
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
23
4
20
50
40
30
1
0
VGS =10 V
10
4.0 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
12
34
5
6
VDS = 10 V
10
1
0.1
100
1000
TA =
55C
25C
75C
150C
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(th)
-
Gate
to
Source
Threshold
Voltage
-
V
0.5
VDS = 10 V
ID = 1 mA
1.0
1.5
2.0
2.5
3.0
50
0
50
100
150
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
10
100
10
100
0.01
0.1
1
TA = 150C
75C
25C
50C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
10
1
0.1
10
20
30
40
50
60
70
80
100
Pulsed
0
VGS = 4.0 V
10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
02
4
6
8
10
12
14
16
18 20
40
50
0
100
60
20
10
30
80
70
90
ID = 10 A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3796-4 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3796 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3796-4 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3798 | 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3798 | 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3796-2-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3796-3-TL-E | 功能描述:JFET Junction FET 30V 10mA Nch SMCP RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3796-4-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3797 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 600V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 600V, TO-220SIS |
| 2SK3797(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba 功能描述:Nch 600V 13A 0.43@10V TO220SIS Bulk |
发布紧急采购，3分钟左右您将得到回复。