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参数资料
| 型号： | 2SK3794-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 247K |
| 代理商： | 2SK3794-Z |
Data Sheet D16778EJ3V0DS
5
2SK3794
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
50
20
40
60
0
50
100
150
ID = 10 A
80
100
120
10 V
VGS = 4.0 V
Pulsed
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
08
12
4
16
20
24
28
32
20
40
60
80
16
14
12
10
8
6
4
2
ID = 20 A
VDD = 48 V
30 V
12 V
VGS
VDS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
IF
-
Diode
Forward
Current
-
A
1.5
VF(S-D) - Source to Drain Voltage - V
0.5
0
Pulsed
0.01
0.1
1
10
100
0 V
VGS = 10 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Foward Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
μ
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相关代理商/技术参数 |
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|---|---|
| 2SK3796-2-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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| 2SK3796-4-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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| 2SK3797(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba 功能描述:Nch 600V 13A 0.43@10V TO220SIS Bulk |
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